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This work is licensed under a Creative Commons Attribution 4.0 International License.


Optics | Physical Sciences and Mathematics | Physics

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© 2020 The Author(s)

Published in IEEE Journal of Quantum Electronics, vol. 56, no. 1, pp. 1-8, Feb. 2020, Art no. 6400108, doi: 10.1109/JQE.2019.2958365.


O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54~\mu \text{m} deep recess created in the 3~\mu \text{m} thick oxide layer of a 220 nm SOI wafer. A 7\times 1.5\,\,\mu \text{m}^{2} cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with < 0.7~\mu \text{m} lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.

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