Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing

Authors

Ruggero Loi, Tyndall National Institute at National University of Ireland, Cork
Steven Kelleher, X-Celeprint Ireland
Raja Fazan Gul, X-Celeprint Ireland
Antonio Jose Trindade, X-Celeprint Ireland
David Gomez, X-Celeprint Ireland
Liam O'Faolain, Cappa Centre, Cork Institute of Technology, Cork, IrelandFollow
Brian Corbett, Tyndall National Institute at National University of Ireland, Cork
Simone Iadanza, Cappa Centre, Cork Institute of Technology, Cork, Ireland
Brendan Roycroft, Tyndall National Institute at National University of Ireland, Cork
James O'Callaghan, Tyndall National Institute at National University of Ireland, Cork
Lei Liu, Tyndall National Institute at National University of Ireland, Cork
Kevin Thomas, Tyndall National Institute at National University of Ireland, Cork
Agnieszka Gocalinska, Tyndall National Institute at National University of Ireland, Cork
Emanuele Pelucchi, Tyndall National Institute at National University of Ireland, Cork
Alexander Farrell, X-Celeprint Ireland

ORCID

https://orcid.org/0000-0001-8470-4600

Document Type

Article

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Disciplines

Optics | Physical Sciences and Mathematics | Physics

Publication Details

© 2020 The Author(s)

Published in IEEE Journal of Quantum Electronics, vol. 56, no. 1, pp. 1-8, Feb. 2020, Art no. 6400108, doi: 10.1109/JQE.2019.2958365.

Abstract

O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54~\mu \text{m} deep recess created in the 3~\mu \text{m} thick oxide layer of a 220 nm SOI wafer. A 7\times 1.5\,\,\mu \text{m}^{2} cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with < 0.7~\mu \text{m} lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.

Recommended Citation

R. Loi et al., "Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing," in IEEE Journal of Quantum Electronics, vol. 56, no. 1, pp. 1-8, Feb. 2020, Art no. 6400108, doi: 10.1109/JQE.2019.2958365.