Date of Award
6-2004
Document Type
Master Thesis
Degree Name
Master of Engineering (Research)
Department
Engineering
First Advisor
Dr James Prendergast
Abstract
A critical aspect of integrated circuit manufacturing is the reliability of the components, in particular the gate oxide of transistors and capacitors. Accelerated stress tests are used for reliability predictions of gate oxides. There are two statistical distributions, which can be applied to stress test failure data, namely the Lognormal or the Weibull distributions. The failure data can fit each distribution equally well. However the use of either distribution will give vastly different lifetime predictions and their correct use is crucial for accurate lifetime prediction. A statistical based test, developed with Monte Carlo data, which is designed to decide if a failure data set has an underlying Lognormal or Weibull distribution is applied to empirical Time Dependent Dielectric Breakdown (TDDB) failure tests. The TDDB tests are carried out on 7nm, 15nm and 20nm thick gate oxides. The results generated show the necessity of making the correct choice between the two distributions for accurate lifetime prediction and validate the test for different oxide thickness.
Recommended Citation
O Driscoll, Eoin James, "Investigation into the Current Statistical Distribution for Oxide Breakdown Versus the Oxide Thickness used in Integrated Circuit Manufacture" (2004). Theses [online].
Available at: https://sword.cit.ie/allthe/803
Access Level
info:eu-repo/semantics/openAccess
Coverage
July 2024