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Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.


Physical Sciences and Mathematics

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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in T. Piwonski et al., Appl. Phys. Lett. 94, 123504 (2009) and may be found at

The authors would like to acknowledge informative discussions with Stephen Hegarty and Bob Manning. This study has been supported by Science Foundation Ireland under Contract No. SFI 07/IN.1/I929, the INSPIRE Programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013, and the Institute of Technology Ireland’s Strand I Programme. The authors in Bruxelles acknowledge the support of the Fonds National de la Recherche Scientifique (Belgium).


The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots’ ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.