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Article

Creative Commons License

Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License
This work is licensed under a Creative Commons Attribution-Noncommercial-No Derivative Works 3.0 License.

Disciplines

Physical Sciences and Mathematics | Physics

CIT Disciplines

1.3 PHYSICAL SCIENCES

Publication Details

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in I. O'Driscoll et al., App. Phys. Lett. 91, 071111 (2007) and may be found at https://doi.org/10.1063/1.2771374

This study has been supported by Science Foundation Ireland (SFI) under Contract Nos. 01/FI/CO13 and 03/IN.1/1340, the EU project TRIUMPH (IST-027638 STP), the Irish Research Council for Science, Engineering and Technology (IRCSET), the Tyndall National Access Programme, and the Irish Higher Education Authority under the PRTLI program.

Abstract

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.

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